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WFF4N60

Silicon N-Channel MOSFET

WFF4N60 Features

* 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V

* Ultra-low Gate Charge(Typical 16nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Isolation Voltage(VISO=4000V AC)

* Maximum Junction Temperature Range(150℃) WFF4N60 Silicon N-Channel MOSFET General Description This Power MOSFET

WFF4N60 General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant top.

WFF4N60 Datasheet (643.05 KB)

Preview of WFF4N60 PDF

Datasheet Details

Part number:

WFF4N60

Manufacturer:

Winsemi

File Size:

643.05 KB

Description:

Silicon n-channel mosfet.

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WFF4N60 Silicon N-Channel MOSFET Winsemi

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