WFF4N60
Winsemi
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Silicon n-channel mosfet. This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially des
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WFF4N60 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFF4N60
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High .
WFF4N60C - Silicon N-Channel MOSFET
(Winsemi)
Features
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Volt.
WFF4N65 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
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N-Channel MOSFET
Features
■ RDS(on) (Max 2.7 Ω )@VGS=10V ■ Gate Charge (Typical 15nC) ■ Improved dv/dt Capability, Hig.
WFF4N65L - Silicon N-Channel MOSFET
(Winsemi)
WFF4N65L Product Description
Silicon N-Channel MOSFET
Features
� 4.0A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 10.
WFF4N65S - 650V Super-Junction Power MOSFET
(Winsemi)
WFF4N65S Product Description
650V Super-Junction Power MOSFET
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� Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � R.
WFF - Fast Fusible Metal Film Resistors
(Welwyn Components Limited)
Fast Fusible Metal Film Resistors
WFF Series
Welwyn Components
• • •
Low power fusing Predictable fusing characteristics Flameproof protection
.
WFF10N60 - N-Channel MOSFET
(Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET
WFF10N60
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□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Ext.
WFF10N60 - Silicon N-Channel MOSFET
(WINSEMI SEMICONDUCTOR)
.DataSheet.in
WFF10N60
Silicon N-Channel MOSFET
Features
� � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast .
WFF10N65 - Silicon N-Channel MOSFET
(WINSEMI SEMICONDUCTOR)
.DataSheet.in
F10N6 5 WF WFF 10N65
Silicon N-Channel MOSFET
Features
� � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43.
WFF10N65L - Silicon N-Channel MOSFET
(Winsemi)
WFF10N65L Product Description
Silicon N-Channel MOSFET
Features
� 10A,650V,RDS(on)(Max1.0Ω)@VGS=10V � Ultra-low Gate charge(Typical 32nC) � Fast Switc.