Description
CAB6R0A23GM4, CAB6R0A23GM4T 2300 V, 6.0 mΩ, Silicon Carbide, Half-Bridge Module Technical .
Features
* Ultra-Low Loss
* High Frequency Operation
* Zero Turn-Off Tail Current from MOSFET
* Normally-Off, Fail-Safe Device Operation
* Aluminium Nitride Substrate
* Optional Pre-Applied Thermal Interface Material
VDS
2300 V
RDS(on) 6.0 mΩ
Applications
* DC Fast Chargers
* Energy Storage Systems
* High-Efficiency Converters / Inverters
* Renewable Energy
* Smart-Grid / Grid-Tied Distributed Generation
* Solar Inverters
System Benefits
* Enables Compact, Lightweight Systems
* Enables