Description
CAB004M12GM4, CAB004M12GM4T 5 V4 DS 3 1200 V 2 1 RDS(on) 4 mΩ 1200 V, 4 mΩ, Silicon Carbide, Half-Bridge Module D DC+ Technical .
Features
* Ultra-Low Loss
* High Frequency Operation
* Zero Turn-Off Tail Current from MOSFET
* Normally-Off, Fail-Safe Device Operation
* Optional Pre-Applied Thermal Interface Material
* Features Gen4 Technology with Soft Body Diode
G1 S1
AC
T1
G2 S2
-t°
Applications
* EV Chargers
* High-Efficiency Converters / Inverters
* Renewable Energy
* Smart-Grid / Grid-Tied Distributed Generation
System Benefits
* Enables Compact, Lightweight Systems
* Increased System Efficiency, due to Low Switching
& ConBduction Losses o