Description
CAB006M12GM3, CAB006M12GM3T 1200 V, 6 mΩ, Silicon Carbide, Half-Bridge Module Technical .
Features
* Ultra-Low Loss
* High Frequency Operation
* Zero Turn-Off Tail Current from MOSFET
* Normally-Off, Fail-Safe Device Operation
* Optional Pre-Applied Thermal Interface Material
VDS RDS(on)
1200 V 6 mΩ
DC+
G1 S1
AC
T1
G2 S2
-t°
T2 DC-
Typical A
Applications
* DC-DC Converters
* EV Chargers
* High-Efficiency Converters / Inverters
* Renewable Energy
* Smart-Grid / Grid-Tied Distributed Generation
System Benefits
* Enables Compact, Lightweight Systems
* Increased System Efficiency, due to Low Switc