CAB006A12GM3T - Silicon Carbide Half-Bridge Module
CAB006A12GM3T Features
* Ultra-Low Loss
* High Frequency Operation
* Zero Turn-Off Tail Current from MOSFET
* Normally-Off, Fail-Safe Device Operation
* Aluminum Nitride Ceramic Substrate
* Optional Pre-Applied Thermal Interface Material VDS RDS(on) 1200 V 6 mΩ DC+
