Description
CHB011M12GM4, CHB011M12GM4T 1200 V, 11 mΩ, Silicon Carbide, T-Type Module Technical .
Features
* Ultra-Low Loss
* High Frequency Operation
* Zero Turn-Off Tail Current from MOSFET
* Normally-Off, Fail-Safe Device Operation
* Optional Pre-Applied Thermal Interface Material
* Features Gen4 Technology with Soft Body Diode
VDS
1200 V
R 5
4
DS
Applications
* EV Chargers
* High-Efficiency Converters / Inverters
* Renewable Energy
* Smart-Grid / Grid-Tied Distributed Generation
B
System Benefits
* Enables Compact, Lightweight Systems
* Increased System Efficiency, due to Low Switching
& Conduction LosseA