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E3M0021120J2 Silicon Carbide Power MOSFET

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Description

E3M0021120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode .

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Datasheet Specifications

Part number
E3M0021120J2
Manufacturer
Wolfspeed
File Size
1.26 MB
Datasheet
E3M0021120J2-Wolfspeed.pdf
Description
Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 4.7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

Applications

* Motor Control
* EV Battery Chargers
* High Voltage DC/DC Converters Part Number E3M0021120J2 Package TO-263-7XL Marking E3M0021120J2 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol VDSmax VGSmax Drain - Source Voltage Gate - Source Voltage Parameter

E3M0021120J2 Distributors

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