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E3M0075120K - Silicon Carbide Power MOSFET

Cree

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Datasheet Details

Part number	E3M0075120K
Manufacturer	Cree
File Size	1.00 MB
Description	Silicon Carbide Power MOSFET
Datasheet	E3M0075120K-Cree.pdf

E3M0075120K Product details

Features

Package.
3rd generation SiC MOSFET technology.
Optimized package with separate driver source pin.
8mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Tab Drain 1 234 D SSG Drain (Pin 1,.

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