E3M0120090J Silicon Carbide Power MOSFET

Cree

Description

E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: E3M0120090J
Manufacturer: Cree
File Size: 0.96 MB
Datasheet: E3M0120090J-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* 3rd generation of SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant
* Wide creepage (~7mm) between d

Applications

* EV charging
* DC/DC converters
* SMPS
* UPS
* Solar PV inverters Package Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number E3M0120090J Package TO-263-7 Marking E3M0120090J Maximum Ratings (TC = 25 ˚C unless oth

E3M0120090J Distributors

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E3M0120090J Silicon Carbide Power MOSFET Cree

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