Datasheet4U.com

E3M0160120K - Silicon Carbide Power MOSFET

Wolfspeed

📥 Download Datasheet

E3M0160120K Datasheet Preview — Preview of E3M0160120K PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	E3M0160120K
Manufacturer	Wolfspeed
File Size	1.05 MB
Description	Silicon Carbide Power MOSFET
Datasheet	E3M0160120K-Wolfspeed.pdf

E3M0160120K Product details

Features

Package.
3rd generation SiC MOSFET technology Tab.
Optimized package with separate driver source pin Drain.
8mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
Automotive Qualified (AEC-Q101) and PPAP Capable Benefits.
Reduc.

📁 E3M0160120K Similar Datasheet

E3M0120090D - Silicon Carbide Power MOSFET (CREE)
E3M0065090D - Silicon Carbide Power MOSFET (CREE)
E3M0075120D - Silicon Carbide Power MOSFET (Cree)
E3M0075120K - Silicon Carbide Power MOSFET (Cree)
E3M0280090D - Silicon Carbide Power MOSFET (CREE)
E3M-V - Color Mark Sensor (Omron)
E3M-VG11 - Color Mark Sensor (Omron)
E3M-VG12 - Color Mark Sensor (Omron)

Other Datasheets by Wolfspeed

E3M0160120D - Silicon Carbide Power MOSFET
E3M0160120J2 - Silicon Carbide Power MOSFET
E3M0120090J - Silicon Carbide Power MOSFET
E3M0016120K - Silicon Carbide Power MOSFET
E3M0021120J2 - Silicon Carbide Power MOSFET
E3M0021120K - Silicon Carbide Power MOSFET

Published: Dec 18, 2024 |