E3M0120090J - Silicon Carbide Power MOSFET
E3M0120090J Features
* 3rd generation of SiC MOSFET technology
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant
* Wide creepage (~7 mm) between
