E4D10120A

10A Silicon Carbide Schottky Diode

Wolfspeed

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Wolfspeed	E4D10120A	DIODE SIL CARB 1200V 33A TO220	DigiKey	386	100 units	$8.48	🛒 Buy Now

E4D10120A Datasheet (1.58 MB)

E4D10120A Datasheet Preview — Preview of E4D10120A PDF Datasheet

Datasheet Details

Part number:

E4D10120A

Manufacturer:

Wolfspeed

File Size:

1.58 MB

Description:

10a silicon carbide schottky diode

E4D10120A Features

* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient

* Zero Reverse Recovery Current / Forward Recovery Voltage

* Temperature-Independent Switching Behavior

* Automotive Qualified (AEC Q101) and PPAP Capable Applications

* Industrial Switched

E4D10120A General Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various applica.

📁 Related Datasheet

E4D10120A - Silicon Carbide Schottky Diode (CREE)
E4D10120A Silicon Carbide Schottky Diode E-Series Automotive Features Package • 4th Generation SiC Merged PIN Schottky Technology • Ze.

E4D02120E - Silicon Carbide Schottky Diode (Wolfspeed)
E4D02120E 4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky .

E4D20120A - Silicon Carbide Schottky Diode (CREE)
E4D20120A Silicon Carbide Schottky Diode E-Series Automotive Features Package • 4th Generation SiC Merged PIN Schottky Technology • Ze.

E4D20120A - 20A Silicon Carbide Schottky Diode (Wolfspeed)
E4D20120A E-Series Automotive 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Car.

E4D20120D - Silicon Carbide Power MOSFET (Wolfspeed)
E4D20120D 1200 V, 20 A Silicon Carbide Schottky Diode Features • 4th generation SiC merged PIN schottky technology • Zero reverse recovery current •.

E4D20120G - 20A Silicon Carbide Schottky Diode (Wolfspeed)
E4D20120G 1200 V, 20 A Silicon Carbide Schottky Diode Features • 4th generation SiC merged PIN Schottky technology • Zero reverse recovery current •.

TAGS

E4D10120A 10A Silicon Carbide Schottky Diode Wolfspeed

Image Gallery

E4D10120A Distributor

Wolfspeed

E4D10120A

Diodes

Vyrian

357 In Stock

Qty : 100 units

Unit Price : $0