E4D20120A Datasheet (Wolfspeed) - 20A Silicon Carbide Schottky Diode

E4D20120A, 20A Silicon Carbide Schottky Diode

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various applica

E4D20120A Features

* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient

* Zero Reverse Recovery Current / Forward Recovery Voltage

* Temperature-Independent Switching Behavior

* Automotive Qualified (AEC Q101) and PPAP Capable Applications

* Industrial Switched