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PXAC200902FC Thermally-Enhanced High Power RF LDMOS FET

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Description

PXAC200902FC Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 * 2170 MHz .
The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric deisgn intended for use in multi-standard cellular power amplifier applications in the 1805.

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Datasheet Specifications

Part number
PXAC200902FC
Manufacturer
Wolfspeed
File Size
436.39 KB
Datasheet
PXAC200902FC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET

Features

* include dual path design, input and output matching, high gain and a thermallyenhanced push-pull package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (

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