XP10N011LM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP10N011LM Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristi.
XP10N011L series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP10N011LM
Manufacturer: YAGEO
File Size: 244.94 KB
Datasheet: XP10N011LM-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 100V 11mΩ 11A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Para

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XP10N011LM N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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