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XP1006 GaAs MMIC Power Amplifier

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Description

8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 .
Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temper.

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Datasheet Specifications

Part number
XP1006
Manufacturer
Mimix Broadband
File Size
268.85 KB
Datasheet
XP1006_MimixBroadband.pdf
Description
GaAs MMIC Power Amplifier

Features

* X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplif

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