XP1006 - GaAs MMIC Power Amplifier

Mimix Broadband

📥 Download Datasheet

XP1006 Datasheet Preview — Preview of XP1006 PDF

Datasheet Details

Part number	XP1006
Manufacturer	Mimix Broadband
File Size	268.85 KB
Description	GaAs MMIC Power Amplifier
Datasheet	XP1006_MimixBroadband.pdf

XP1006 Product details

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 4.5 A +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF.It is recommended to keep channel temperature as low as possible for maximum life.Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=10%,TA=25ºC) Parameter Frequency Range (f )

Features

X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology,.

📁 XP1006 Similar Datasheet

XP1005-BD - Power Amplifier (MA-COM)
XP1011ALMT - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
XP1031-QK - Power Amplifier (MA-COM)
XP1035-QH - Power Amplifier (MA-COM)
XP1039-QJ - Power Amplifier (MA-COM)
XP1042-QT - Power Amplifier (MA-COM)
XP1043-QH - Power Amplifier (MA-COM)
XP1044-QL - Power Amplifier (MA-COM)

Other Datasheets by Mimix Broadband

XP1006-FA - GaAs MMIC Power Amplifier
XP1000 - GaAs MMIC Power Amplifier
XP1000-BD - GaAs MMIC Power Amplifier
XP1001 - GaAs MMIC Power Amplifier
XP1003 - GaAs MMIC Power Amplifier
XP1003-BD - Power Amplifier

Published: May 25, 2007 |