XP60AN1K1P N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60AN1K1P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characterist.
XP60AN1K1 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60AN1K1P
Manufacturer: YAGEO
File Size: 148.88 KB
Datasheet: XP60AN1K1P-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID3 G D S 600V 1.1Ω 8A TO-220(P) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified

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XP60AN1K1P N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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