XP60AN1K3J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60AN1K3J Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characterist.
XP60AN1K3 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60AN1K3J
Manufacturer: YAGEO
File Size: 135.74 KB
Datasheet: XP60AN1K3J-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications. BVDSS RDS(ON) ID3 600V 1.3Ω 7A G DS TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V

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XP60AN1K3J N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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