XP60SA180DP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60SA180DP Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH.
XP60SA180D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60SA180DP
Manufacturer: YAGEO
File Size: 152.44 KB
Datasheet: XP60SA180DP-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID3,4 G D S 600V 0.18Ω 20A TO-220(P) Absolute Maximum Ratings@Tj=25oC(unless otherwise speci

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XP60SA180DP N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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