XP60SA180DR N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60SA180DR Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH.
XP60SA180D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60SA180DR
Manufacturer: YAGEO
File Size: 152.76 KB
Datasheet: XP60SA180DR-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3,4 600V 0.18Ω 20A G D S TO-262(R) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rati

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XP60SA180DR N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP60SA180DR-like datasheet