XP60SA190DDT8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60SA190DDT8 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test Pin 5 Drain ▼ Low trr / Qrr ▼ Simple Drive Require.
Pin 1 Gate Pin 2 Driver Source Pin 3,4 Power Source XP60SA190D series are innovated design and silicon process technology to achieve the lowest pos.

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Datasheet Specifications

Part number: XP60SA190DDT8
Manufacturer: YAGEO
File Size: 167.50 KB
Datasheet: XP60SA190DDT8-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID3,4 600V 190mΩ 20A Top View 5 The PDFN 8X8_HV package is a very low profile for commercialindustrial surface mount application and suited for switching power converters. 12 34 PDFN 8X8_HV Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating

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XP60SA190DDT8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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