XP60SA290DS N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60SA290DS Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH.
XP60SA290D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60SA290DS
Manufacturer: YAGEO
File Size: 295.64 KB
Datasheet: XP60SA290DS-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID6 600V 0.29Ω 13.3A GD S TO-263(S) Absolute Maximum Ratings@Tj=25oC(unle

XP60SA290DS Distributors

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XP60SA290DS N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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