XP60SA290ADI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60SA290ADI Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ Ro.
XP60SA290AD series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60SA290ADI
Manufacturer: YAGEO
File Size: 255.15 KB
Datasheet: XP60SA290ADI-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3,6 600V 0.29Ω 13.6A G DS TO-220CFM(I) Absolu

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XP60SA290ADI N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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