XP60SC180DR N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60SC180DR Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH.
XP60SC180D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60SC180DR
Manufacturer: YAGEO
File Size: 151.05 KB
Datasheet: XP60SC180DR-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3,4 600V 0.18Ω 20A G DS TO-262(R) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Ratin

XP60SC180DR Distributors

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XP60SC180DR N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP60SC180DR-like datasheet