XP60SL115DS N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60SL115DS Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH.
XP60SL115D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60SL115DS
Manufacturer: YAGEO
File Size: 295.85 KB
Datasheet: XP60SL115DS-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID3 600V 115mΩ 28A G D S TO-263(S) Absolute Maximum Ratings@Tj=25oC(unless

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XP60SL115DS N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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