XP65SA430ADR N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP65SA430ADR Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement ▼ RoH.
XP65SA430AD series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP65SA430ADR
Manufacturer: YAGEO
File Size: 192.00 KB
Datasheet: XP65SA430ADR-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3,4 650V 0.438Ω 10A G D S TO-262(R) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rat

XP65SA430ADR Distributors

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XP65SA430ADR N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP65SA430ADR-like datasheet