XP65SE190DDT8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP65SE190DDT8 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test Pin 5 Drain ▼ Low trr / Qrr ▼ Simple Drive Require.
Pin 1 Gate Pin 2 Driver Source Pin 3,4 Power Source XP65SE190D series are innovated design and silicon process technology to achieve the lowest pos.

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Datasheet Specifications

Part number: XP65SE190DDT8
Manufacturer: YAGEO
File Size: 205.52 KB
Datasheet: XP65SE190DDT8-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID3,4 Top View 5 650V 0.19Ω 18.2A The PDFN 8X8_HV package is a very low profile for commercialindustrial surface mount application and suited for switching power converters. 12 34 PDFN 8X8_HV Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating

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XP65SE190DDT8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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