XP83T03GJB N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP83T03GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characte.
XP83T03 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP83T03GJB
Manufacturer: YAGEO
File Size: 218.95 KB
Datasheet: XP83T03GJB-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-251S short lead package is preferred for all commercial-industrial through-hole applications without leadcutted. BVDSS RDS(ON) ID 30V 6mΩ 75A GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM

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XP83T03GJB N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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