1N4448M Datasheet (YS) - 500mW DO-34 Hermetically Sealed Glass Fast Switching Diodes

1N4448M, 500mW DO-34 Hermetically Sealed Glass Fast Switching Diodes

DATA SHEET SEMICONDUCTOR 500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes 1N4448M AXIAL LEAD DO34 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 500 mW TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature +175 °C WIV Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current 450 mA IFSURGE Peak Forward Surge Current 2A These r

1N4448M Features

* Fast Switching Device (TRR