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1N4448M Datasheet - YS

1N4448M 500mW DO-34 Hermetically Sealed Glass Fast Switching Diodes

DATA SHEET SEMICONDUCTOR 500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes 1N4448M AXIAL LEAD DO34 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 500 mW TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature +175 °C WIV Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current 450 mA IFSURGE Peak Forward Surge Current 2A These r.

1N4448M Features

* Fast Switching Device (TRR

1N4448M Datasheet (530.74 KB)

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Datasheet Details

Part number:

1N4448M

Manufacturer:

YS

File Size:

530.74 KB

Description:

500mw do-34 hermetically sealed glass fast switching diodes.

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1N4448M 500mW DO-34 Hermetically Sealed Glass Fast Switching Diodes YS

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