YJG25GP10A Datasheet - Yangzhou Yangjie

P-Channel Enhancement Mode Field Effect Transistor

YJG25GP10A General Description

* Split gate trench MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-s.

YJG25GP10A Datasheet (1.05 MB)

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YJG25GP10A

Manufacturer:

Yangzhou Yangjie

File Size:

1.05 MB

Description:

P-channel enhancement mode field effect transistor.
YJG25GP10A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID RDS(ON)( at VGS=-10V) R.

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YJG25GP10A P-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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YJG25GP10A General Description

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