YJG25GP10A
Yangzhou Yangjie
1.05 MB
P-channel enhancement mode field effect transistor.
YJG25GP10A
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
* VD.
* Split gate trench MOSFET technology * Excellent package for heat dissipation * High density cell d.
📁 Related Datasheet
YJG25GP10AQ, VBsemi
YJG25GP10AQ-VB
YJG25GP10AQ-VB Datasheet P-Channel 1 00-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 100
0.075 at VGS = - 10 V 0.08 0 at V.
YJG53G06A, Yangzhou Yangjie
YJG53G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5.
YJG85G06A, Yangzhou Yangjie
YJG85G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● ID (Package limited) ● RDS(ON)( at VGS=10V.
YJ162-1, ETC
.
YJ60A, YENJI
Y J 60A
■
Y J 60A ， CMOS ，，。
LY JN60A ， 4 。 ，±1%。 OPENDRAIN ， IO LED 。
■
：<10uA 4 ， 4 ，。 ：±2%
■
LED
■
SOT23-6L
D1 D2 D.
YJB150N06BQ, Yangzhou Yangjie
YJB150N06BQ
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ●.
YJD15N10A, Yangzhou Yangjie
YJD15N10A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5.
YJD80G06A, Yangzhou Yangjie
YJD80G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5.
