YJG53G06A

N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	Stock	Quantity	Price	Buy Now
	Yangzhou Yangjie Electronics Co Ltd	YJG53G06A	YJG53G06A	Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 34A; 30W	TME	0	3000 units	$0.16

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YJG53G06A

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Yangzhou Yangjie

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Description:

N-channel enhancement mode field effect transistor.
YJG53G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS.
* Split Gate Trench MOSFET technology * Excellent package for heat dissipation * High density cell d.

✔ YJG53G06A Application

DC-DC Converters
Power management functions
Industrial and Motor Drive application
Absolute Maximum

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YJG53G06A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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✔ YJG53G06A Application

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