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YJG53G06A Datasheet - Yangzhou Yangjie

YJG53G06A N-Channel Enhancement Mode Field Effect Transistor

* Split Gate Trench MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Industrial and Motor Drive application * Absolute Maximum Ratings (TA=25℃unless other.

YJG53G06A Datasheet (631.44 KB)

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Datasheet Details

Part number:

YJG53G06A

Manufacturer:

Yangzhou Yangjie

File Size:

631.44 KB

Description:

N-channel enhancement mode field effect transistor.

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