Datasheet Details
| Part number | YJG53G06A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 631.44 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJG53G06A-YangzhouYangjie.pdf
|
| Part number | YJG53G06A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 631.44 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJG53G06A-YangzhouYangjie.pdf
|
Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Industrial and Motor Drive application Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A Tc=25℃ Tc=100℃ Avalanche energy B Total Power Dissipation Tc=25℃ Tc=100℃
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