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YJG85G06A Datasheet - Yangzhou Yangjie

YJG85G06A N-Channel Enhancement Mode Field Effect Transistor

* Split Gate Trench MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Synchronous-rectification applications * Absolute Maximum Ratings (TA=25℃unless other.

YJG85G06A-YangzhouYangjie.pdf

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Datasheet Details

Part number:

YJG85G06A

Manufacturer:

Yangzhou Yangjie

File Size:

842.33 KB

Description:

N-channel enhancement mode field effect transistor.

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