FCX596
Zetex Semiconductors
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Pnp silicon planar high voltage transistor.
SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995 7
FCX596
D
PARTMARKING DETAIL P96 S G SOT89 SYMBOL VCBO VCEO VEBO ICM IC .
📁 Related Datasheet
FCX591 - PNP Silicon Planar Medium Power High Perormance Transistor
(GME)
Production specification
PNP Silicon Planar Medium Power High Perormance Transistor FCX591
FEATURES
Complementary type:FCX491.
Pb
Lead-free
ORDE.
FCX591 - GENERAL PURPOSE TRANSISTOR
(HOTTECH)
REPLACEMENT TYPE : FCX591
FEATURES Power Dissipation
HECX591(PNP)
GENERAL PURPOSE TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
P.
FCX591 - 60V PNP MEDIUM POWER TRANSISTOR
(Diodes)
Features
• BVCEO > -60V • IC = -1A high Continuous Collector Current • ICM = -2A Peak Collector Current • RCE(SAT) = 295mΩ for a Low Equivalent On-Res.
FCX591A - 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
(Diodes)
A Product Line of Diodes Incorporated
FCX591A
40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
Features
• BVCEO > -40V • Maximum Continuous Cu.
FCX591AQ - PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
(Diodes)
FCX591AQ
40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirem.
FCX593 - 100V PNP MEDIUM POWER TRANSISTOR
(Diodes)
Features
• BVCEO > -100V • IC = -1A high Continuous Collector Current • ICM = -2A Peak Collector Current • Low saturation voltage VCE(sat) < -200mV @ .
FCX555 - PNP HIGH VOLTAGE SWITCHING TRANSISTOR
(Diodes)
A Product Line of Diodes Incorporated
Green
FCX555
150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89
Features
• BVCEO > -150V • BVCEV > -180V • IC .
FCX558 - PNP HIGH VOLTAGE TRANSISTOR
(Diodes)
Features
BVCEO > -400V IC = -200mA High Continuous Current ICM = -500mA Peak Pulse Current Excellent hFE Characteristics up to -100mA Low Sa.
