ZXTN25100DZ Datasheet, Transistor, Zetex Semiconductors

ZXTN25100DZ Features

• Transistor
• High power dissipation SOT89 package
• High gain
• Low saturation voltage
• 180V forward blocking voltage
• 6V reverse blocking voltage B C E

PDF File Details

Part number:

ZXTN25100DZ

Manufacturer:

Zetex Semiconductors

File Size:

337.38kb

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📄 Datasheet

Description:

100v npn transistor. Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in

ZXTN25100DZ Application

• Applications
• PSU start up switch
• DC - DC converters
• Motor drive
• Relay, lamp and solenoid drive Ordering inf

TAGS

ZXTN25100DZ

Zetex Semiconductors

📁 Related Datasheet

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ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m.

ZXTN25100DG - 100V NPN HIGH GAIN TRANSISTOR (Diodes)
Features  BVCEX > 180V  BVCEO > 100V  BVECO > 6V  IC = 3A High Continuous Current  Low Saturation Voltage VCE(sat) < 100mV @ 1A  RCE(sat) = 85mΩ.

ZXTN25100DGQTA - 100V NPN HIGH GAIN TRANSISTOR (Diodes)
Features  BVCEX > 180V  BVCEO > 100V  BVECO > 6V  IC = 3A High Continuous Current  Low Saturation Voltage VCE(sat) < 100mV @ 1A  RCE(sat) = 85mΩ.

ZXTN25100DGTA - 100V NPN HIGH GAIN TRANSISTOR (Diodes)
Features  BVCEX > 180V  BVCEO > 100V  BVECO > 6V  IC = 3A High Continuous Current  Low Saturation Voltage VCE(sat) < 100mV @ 1A  RCE(sat) = 85mΩ.

ZXTN25100DZ - 100V NPN TRANSISTOR (DIODES)
Features  BVCEO > 100V  BVECO > 6V  IC = 2.5A Continuous Collector Current  ICM = 3.5A Peak Collector Current  VCE(SAT) < 100mV @ 1A  RCE(SAT) =.

ZXTN25100BFH - NPN medium power transistor (Zetex Semiconductors)
ZXTN25100BFH 100V, SOT23, medium power transistor Summary BVCEX > 170V BVCEO > 100V BVECO > 6V IC(cont) = 3A VCE(sat) < 80mV @ 1A RCE(sat) = 67m⍀ PD =.

ZXTN25100BFH - 100V NPN LOW SATURATION TRANSISTOR (Diodes)
Features  BVCEO > 100V  BVCEX > 170V Forward Blocking Voltage  BVECO > 6V Reverse Blocking Voltage  IC = 3A high Continuous Collector Current  Lo.

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ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC(cont) = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD =.

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