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CSD19536KTT Datasheet - Texas Instruments

CSD19536KTT 100V N-Channel Power MOSFET

This 100-V, 2-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) D.

CSD19536KTT Features

* 1 Ultra-Low Qg and Qgd

* Low Thermal Resistance

* Avalanche Rated

* Lead-Free Terminal Plating

* RoHS Compliant

* Halogen Free

* D2PAK Plastic Package 2 Applications

* Secondary Side Synchronous Rectifier

* Hot Swap

* M

CSD19536KTT Datasheet (915.00 KB)

Preview of CSD19536KTT PDF

Datasheet Details

Part number:

CSD19536KTT

Manufacturer:

Texas Instruments ↗

File Size:

915.00 KB

Description:

100v n-channel power mosfet.

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CSD19536KTT 100V N-Channel Power MOSFET Texas Instruments

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