CSD25301W1015 - P-Channel Power MOSFET

Texas Instruments

CSD25301W1015 Datasheet Preview — Preview of CSD25301W1015 PDF

Datasheet Details

Part number	CSD25301W1015
Manufacturer	Texas Instruments ↗
File Size	153.30 KB
Description	P-Channel Power MOSFET
Datasheet	CSD25301W1015-etcTI.pdf

CSD25301W1015 Product details

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. 20 V Qg Gate Charge Total (4.5V) 1.9 nC Qgd Gate Charge Gate to Drain 0.4 nC VGS = 1.5V 175 mΩ RDS(on) Drain to Source On Resistance VGS = 2.5V 80 mΩ VGS = 4.5V 62 mΩ VGS(th) Voltage Threshold

Features

1.
Ultra Low Qg and Qgd.
Small Footprint.
Low Profile 0.62mm Height.
Pb Free.
RoHS Compliant.
Halogen Free.
CSP 1 × 1.5 mm Wafer Level Package.

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Published: Jun 20, 2021 |