LMG5200 - 10-A GaN Half-Bridge Power Stage
The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs.
The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
GaN FETs prov
LMG5200 Features
* 1 Integrated 15-mΩ GaN FETs and Driver
* 80-V Continuous, 100-V Pulsed Voltage Rating
* Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
* Very Low Common Source Inductance to Ensure High Slew Rate Switching
