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LMG2100R044 Datasheet - Texas Instruments

35A GaN Half-Bridge Power Stage

LMG2100R044 Features

* Integrated 4.4mΩ half-bridge GaN FETs and driver

* 90V continuous, 100V pulsed voltage rating

* Package optimized for easy PCB layout

* High slew rate switching with low ringing

* 5V external bias power supply

* Supports 3.3V and 5V input logic level

LMG2100R044 General Description

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration. GaN FETs provi.

LMG2100R044 Datasheet (1.34 MB)

Preview of LMG2100R044 PDF

Datasheet Details

Part number:

LMG2100R044

Manufacturer:

Texas Instruments ↗

File Size:

1.34 MB

Description:

35a gan half-bridge power stage.

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LMG2100R044 35A GaN Half-Bridge Power Stage Texas Instruments

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