LMG2100R044 - 35A GaN Half-Bridge Power Stage
The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs.
The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.
GaN FETs provi
LMG2100R044 Features
* Integrated 4.4mΩ half-bridge GaN FETs and driver
* 90V continuous, 100V pulsed voltage rating
* Package optimized for easy PCB layout
* High slew rate switching with low ringing
* 5V external bias power supply
* Supports 3.3V and 5V input logic level
