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TMS418169A

DYNAMIC RANDOM-ACCESS MEMORIES

TMS418169A Features

* maximum RAS access times of 50-, 60-, and 70 ns, and the OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable TMS428169A features maximum RAS access times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data ou

TMS418169A General Description

PIN NOMENCLATURE The TMS418169A and TMS428169A are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 1 048 576 words of A[0:9] DQ[0:15] LCAS UCAS Address Inputs Data In / Data Out Lower Column-Address Strobe Upper Column-Address Strobe 16 bits each. They employ state-of-th.

TMS418169A Datasheet (422.65 KB)

Preview of TMS418169A PDF

Datasheet Details

Part number:

TMS418169A

Manufacturer:

Texas Instruments ↗

File Size:

422.65 KB

Description:

Dynamic random-access memories.
This data sheet is applicable to TMS418169A and TMS428169A symbolized by Revision ā€œEā€, and subsequent revisions as described in the device symboliz.

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TAGS

TMS418169A DYNAMIC RANDOM-ACCESS MEMORIES Texas Instruments

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