TMS418169A Datasheet - Texas Instruments

TMS418169A DYNAMIC RANDOM-ACCESS MEMORIES

PIN NOMENCLATURE The TMS418169A and TMS428169A are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 1 048 576 words of A[0:9] DQ[0:15] LCAS UCAS Address Inputs Data In / Data Out Lower Column-Address Strobe Upper Column-Address Strobe 16 bits each. They employ state-of-th.

This data sheet is applicable to TMS418169A and TMS428169A symbolized by Revision “E”, and subsequent revisions as described in the device symbolization section. D Organization . . . 1 048576 by 16 Bits D Single 5-V Power Supply for TMS418169A (± 10% Tolerance) D Single 3.3-V Power Supply for TMS428169A (± 0.3 V Tolerance) D 1 024-Cycle Refresh in 16 ms D Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME EDO tRAC tCAC MAX MAX tAA MAX CYCLE MIN ’418169A-50 50 ns 13 ns 25 n.

TMS418169A Features

* maximum RAS access times of 50-, 60-, and 70 ns, and the OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable TMS428169A features maximum RAS access times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data ou

TMS418169A Datasheet (422.65 KB)