TMS44409 Datasheet, Memories, Texas Instruments

TMS44409 Features

  • Memories maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including clocks, are compatibl

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TMS44409

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Texas Instruments ↗

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📄 Datasheet

Description:

Dynamic random-access memories. OE RAS Output Enable Row-Address Strobe The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized a

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TAGS

TMS44409
DYNAMIC
RANDOM-ACCESS
MEMORIES
Texas Instruments

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