TMS44409P, TMS44409 Datasheet - Texas Instruments

TMS44409P, TMS44409, DYNAMIC RANDOM-ACCESS MEMORIES

ADVANCE INFORMATION TMS44409, TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS563 * JULY1995 D Organization ...1 048576 .
OE RAS Output Enable Row-Address Strobe The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words.

Features

* maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is u

TMS44409-etcTI.pdf