TPS1101Y, TPS1101 Datasheet - Texas Instruments

TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution PW PACKAGE in battery-powered systems by means of the Texas Instruments LinBiCMOS™ process. With a maximum VGS(th) of * 1.5 V and an IDSS of only 0.5.

TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.09 Ω Typ at VGS = 10 V D 3 V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = 1.5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 SLVS079C DECEMBER 1993 REVISED AUGUST 1995 D PACKAGE (TOP VIEW) SOURCE SOURCE SOURCE GATE 1 2 3 4 8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN D PACKAGE descrip.

TPS1101-etcTI.pdf