Description
TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS D Low rDS(on) ...65 mΩ Typ at VGS = * 4.5 V D High Current Capability 6 A at VGS = .
The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor.
Features
* extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of
* 0.9 V and an IDSS of only
* 100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribut
Applications
* For compatibility with existing designs, the TPS1110 has a pinout common with other P-channel
MOSFETs in small-outline integrated circuit (SOIC) packages. The TPS1110 is characterized for an operating junction temperature range, TJ, from
* 40°C to 150°C. The D package is available packaged
