TPS1110Y Datasheet, Mosfets, Texas Instruments

TPS1110Y Features

• Mosfets extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of
    – 0.9 V and an IDSS of o

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TPS1110Y

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Texas Instruments ↗

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📄 Datasheet

Description:

Single p-channel logic-level mosfets. The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor. The device features extremely low-rDS(on) valu

TPS1110Y Application

• Applications For compatibility with existing designs, the TPS1110 has a pinout common with other P-channel MOSFETs in small-outline integrated circ

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TPS1110Y

Texas Instruments

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