* extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of
* 0.9 V and an IDSS of only
* 100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribut
TPS1110
223.07 KB
Single p-channel logic-level mosfets.
TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS D Low rDS(on) . . . 65 mΩ Typ at VGS = 4.5 V D High Current Capability 6 A at VGS = .
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