TPS1110 Datasheet - Texas Instruments

TPS1110 SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS D Low rDS(on) . . . 65 mΩ Typ at VGS = 4.5 V D High Current Capability 6 A at VGS = 4.5 V D Logic-Level Gate Drive (3 V Compatible) VGS(th) = 0.9 V Max D Low Drain-Source Leakage Current < 100 nA From 25°C to 75°C at VDS = 6 V D Fast Switching . . . 5.8 ns Typ td(on) D Small-Outline Surface-Mount Power Package SLVS100B OCTOBER 1994 REVISED JANUARY 1998 D PACKAGE (TOP VIEW) SOURCE.

TPS1110 Features

* extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of

* 0.9 V and an IDSS of only

* 100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribut

TPS1110-etcTI.pdf