BSM15GD120DN2 Datasheet - eupec GmbH

BSM15GD120DN2 IGBT

www.DataSheet4U.com BSM 15 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type BSM 15 GD 120 DN2 BSM 15 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip.

BSM15GD120DN2_eupecGmbH.pdf