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BSM150GAL120DN2E3166 Datasheet - Siemens Semiconductor Group

BSM150GAL120DN2E3166 IGBT

BSM150GAL120DN2E3166 IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM150GAL120DN2E3166 1200V 210A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage HALF BRIDGE GAL 2 C67076-A2112-A70 Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 210 150 TC = 25 °C TC .

BSM150GAL120DN2E3166_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

BSM150GAL120DN2E3166

Manufacturer:

Siemens Semiconductor Group

File Size:

80.48 KB

Description:

Igbt.

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BSM150GAL120DN2E3166 BSM150GAL120DN2E3166 IGBT Siemens Semiconductor Group

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