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BSM150GB120DN2E3166 Datasheet - Siemens Semiconductor Group

BSM150GB120DN2E3166 IGBT

BSM150GB120DN2E3166 IGBT Power Module Preliminary data Half-bridge Including fast free-wheeling diodes Enlarged diode area Package with insulated metal base plate Type BSM150GB120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67076-A2112-A70 1200V 210A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 210 150 .

BSM150GB120DN2E3166_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

BSM150GB120DN2E3166

Manufacturer:

Siemens Semiconductor Group

File Size:

130.94 KB

Description:

Igbt.

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BSM150GB120DN2E3166 BSM150GB120DN2E3166 IGBT Siemens Semiconductor Group