BSM150GB120DN2E3166 - IGBT
BSM150GB120DN2E3166 IGBT Power Module Preliminary data Half-bridge Including fast free-wheeling diodes Enlarged diode area Package with insulated metal base plate Type BSM150GB120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67076-A2112-A70 1200V 210A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 210 150
