BSM10GD120DN2 Datasheet - eupec

BSM10GD120DN2 IGBT

BSM 10 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage .

BSM10GD120DN2-eupec.pdf