5HB06N8 Power MOSFET

Description

5HB06N8 MOS H-BRIDGE- 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Summary Device V(BR)DSS N-CH 60V P-CH -60V QG 9.0nC RDS(on) 25m.
This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. 2 x N + 2 x P channels.

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Datasheet Specifications

Part number: 5HB06N8
Manufacturer: maspower
File Size: 1.99 MB
Datasheet: 5HB06N8-maspower.pdf
Description: Power MOSFET

Features

* low on-resistance achievable with low gate drive. Features
* 2 x N + 2 x P channels in a SOIC package

Applications

* DC Motor control
* DC-AC Inverters Ordering information Device 5HB06N8 Device marking WFS 5HB06N8 Reel size (inches) 13 Tape width Quantity (mm) per reel 12 2,500 www. maspowersemi. com 1 5HB06N8 H-BRIDGE-MOS 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Absolute max

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