* low on-resistance achievable with low gate drive. Features
* 2 x N + 2 x P channels in a SOIC package
* Low voltage (VGS = 4.5 V) gate drive Applications
* DC Motor control
* DC-AC Inverters Ordering information Device 5HB06N8 Device marking WFS 5HB06N8 Reel size (i
5HB06N8
maspower
1.99 MB
Power mosfet.
5HB06N8
MOS
H-BRIDGE-
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power
MOSFET
Summary
Device
V(BR)DSS
N-CH
60V
P-CH
-60V
QG 9.0nC
RDS(on) 25m.
📁 Related Datasheet
5HB03N8 30V SO8 Complementary enhancementmode MOSFET H-Bridge (Winsemi)
5H0165R KA5H0165R (Fairchild Semiconductor)
5H02659 KA5H02659 (Fairchild Semiconductor)
5H02659R Power Switch (ON Semiconductor)
5H02659RN Power Switch (Fairchild Semiconductor)
5H0265RC Power Switch (Fairchild Semiconductor)
5H0265RC Power Switch (ON Semiconductor)
5H0280R KA5H0280R (Fairchild Semiconductor)
5H0280R Power Switch (ON Semiconductor)
5H0365R Fairchild Power Switch(FPS) (Fairchild Semiconductor)
