Download the TIP31B datasheet PDF.
This datasheet also covers the TIP31 variant, as both devices belong to the same complementary silicon power transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
Complementary NPN-PNP transistors Low collector-emitter saturation voltage
Satisfactory linearity of foward current transfer ratio hFE TO-220AB package which can be installed to the heat sink with one screw
Collector - Emitter Saturation Voltage: VCE(sat) = 1.2Vdc (MAX. ) @ IC = 3A
Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min. ) - TIP31,TIP32
= 60Vdc (Min. ) - TIP31A,TIP32A = 80Vdc (Min. ) - TIP31B, TIP32B = 100Vdc (Min. ) - TIP31C, TIP32C DC Current Gain hFE = 25 (Min. ) @ Ic = 1.0A.
Full PDF Text Transcription for TIP31B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
TIP31B. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES Complementary NPN-PNP...
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Silicon Power Transistor 3A/40~100V/40W FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-220AB package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.2Vdc (MAX.) @ IC = 3A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP31,TIP32 = 60Vdc (Min.) - TIP31A,TIP32A = 80Vdc (Min.) - TIP31B, TIP32B = 100Vdc (Min.) - TIP31C, TIP32C DC Current Gain hFE = 25 (Min.) @ Ic = 1.0A High Current Gain - Bandwidth product fT = 3.0 MHz (Min.) @ Ic=0.
TIP31B Datasheet
